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TYPICAL PERFORMANCE CURVES
APT50GT120B2RDL(G) 1200V
APT50GT120B2RDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Resonant Mode IGBT(R)
The Thunderbolt IGBT(R) used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed.
Features * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * Low forward Diode Voltage (VF) * Ultrasoft Recovery Diode * SSOA Rated * RoHS Compliant Typical Applications Induction Heating Welding Medical High Power Telecom Resonant Mode Phase Shifted Bridge
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
8
All Ratings: TC = 25C unless otherwise specified.
APT50GT120B2RDL(G) UNIT Volts
1200 30
@ TC = 25C
106 50 150 150A @ 1200V 694 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA) Gate Threshold Voltage (VCE = VGE, I C = 2mA, Tj = 25C) MIN TYP MAX Units
1200 4.5 2.7 5.5 3.2 4.0 300
2
6.5 3.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2
I CES I GES RG(int)
A nA
6-2009 052-6350 Rev B
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
1500 300 5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT50GT120B2RDL(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 50A TJ = 150C, R G = 1.0
7,
MIN
TYP
MAX
UNIT
2500 250 155 7.5 240 20 110
VGE = nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H, VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 50A RG = 4.7 7 TJ = +25C
150 23 50 215 26 3585 4835 1910 23 50 255 50 3580 6970 2750
A
ns
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 50A RG = 4.7 7 TJ = +125C
ns
Turn-on Switching Energy (Diode)
6
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.18 .61 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance.
6-2009
8 Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6350
Rev B
TYPICAL PERFORMANCE CURVES
150 125 100 75 50 25 0
V
GE
APT50GT120B2RDL(G)
150 15V 13V IC, COLLECTOR CURRENT (A) 125 11V 100 10V 75 50 25 0 9V 8V 7V 6V 0 10 15 20 25 30 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 50A C T = 25C
J
= 15V
TJ= 25C TJ= 55C
IC, COLLECTOR CURRENT (A)
TJ= 125C TJ= 150C
0 1 2 3 4 5 6 7 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
150 125 100 75 50 25 0
16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 GATE CHARGE (nC) FIGURE 4, Gate charge 350 VCE = 960V VCE = 240V VCE = 600V
IC, COLLECTOR CURRENT (A)
TJ= -55C TJ= 25C TJ= 125C 0 10 12 14 2 4 6 8 VCE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4 3 2 1 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
7 6 5 4 3 2 1 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 100A
IC = 100A IC = 50A IC = 25A
IC = 50A IC = 25A
9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
8
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 100
25
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A) 80
60
052-6350
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
0 25
Rev B
20
6-2009
40
APT50GT120B2RDL(G)
35 30 25 20 15 10 5 TJ = 25C, or 125C 10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 160 140 120 tr, RISE TIME (ns) 100 80 60 40 20 10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 25,000 EON2, TURN ON ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 5
G
300 td (OFF), TURN-OFF DELAY TIME (ns) 250 200 150 100 50 VCE = 800V RG = 5 10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 60 50 tf, FALL TIME (ns) 40 30 20 10 0
TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V RG = 5, L = 100H, VCE = 800V VGE =15V,TJ=125C VGE =15V,TJ=25C
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
VCE = 800V
0
RG = 5 L = 100H
0
L = 100H
RG = 5, L = 100H, VCE = 800V
TJ = 25 or 125C,VGE = 15V
0
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 6000 EOFF, TURN OFF ENERGY LOSS (J) 5000 4000 3000 2000
TJ = 25C
V = 800V CE V = +15V GE R = 5
G
20,000
TJ = 125C
TJ = 125C
15,000
10,000
5,000
TJ = 25C
1000 0
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 60,000 SWITCHING ENERGY LOSSES (J) 50,000 40,000 30,000 20,000 10,000 0
Eon2,50A Eoff,50A Eon2,25A Eoff,100A Eoff,25A
V = 800V CE V = +15V GE T = 125C
J
0
10 30 50 70 90 110 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 25,000 SWITCHING ENERGY LOSSES (J)
V = 800V CE V = +15V GE R = 5
G
Eon2,100A
Eon2,100A
20,000
15,000
10,000
Eon2,50A Eoff,50A Eon2,25A Eoff,25A
6-2009
5,000
Eoff,100A
Rev B
052-6350
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
4,000 Cies IC, COLLECTOR CURRENT (A)
160 140 120 100 80 60 40 20
APT50GT120B2RDL(G)
C, CAPACITANCE ( F)
P
1,000
500
Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100
200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
00
0.20 D = 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.16
0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
140 FMAX, OPERATING FREQUENCY (kHz)
50
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf
10
T = 125C J T = 75C C D = 50 % V = 800V CE R = 5
G
f max2 = Pdiss =
Pdiss - P cond E on2 + E off TJ - T C R JC
30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
4
10 20
052-6350
Rev B
6-2009
APT50GT120B2RDL(G)
APT30DL120
10%
Gate Voltage TJ = 125C
td(on)
V CC
IC
V CE
tr 90%
Collector Current
5%
10%
5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
052-6350
Rev B
6-2009
TYPICAL PERFORMANCE CURVES
APT50GT120B2RDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 145C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT50GT120B2RDL(G) UNIT Amps
30 81 60
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C MIN TYP MAX UNIT Volts
1.6 2.0 1.6
MIN TYP
2.1
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions MAX UNIT ns nC Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/s VR = 800V, TC = 125C IF =30A, diF/dt = -200A/s VR = 800V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 800V, TC = 25C
61 592 2694 9 389 3459 15 165 4646 44 -
-
Amps ns nC Amps ns nC Amps
0.9 ZJC, THERMAL IMPEDANCE (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10-5 0.1 0.05 10
-4
0.9
0.7
0.5 0.3
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
052-6350
Rev B
6-2009
1.0 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
APT50GT120B2RDL(G)
100 TJ= 125C 80 IF, FORWARD CURRENT (A) TJ= 55C TJ= 25C 60 TJ= 150C trr, COLLECTOR CURRENT (A) 500 450 400 350 300 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 0 0 200 400 600 800 1000 60A 30A 15A
T = 125C J V = 800V
R
40
20
Qrr, REVERSE RECOVERY CHARGE (nC)
VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 7000
T = 125C J V = 800V
R
-diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 70 IRRM, REVERSE RECOVERY CURRENT (A) 60 50 40 30 20 10 0 30A 15A
T = 125C J V = 800V
R
6000 5000 4000 3000 2000 1000 0
60A 30A
60A
15A
0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 0.8 0.6 0.4 0.2 0
0 200 400 60 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/s) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 100 90
Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s)
80 tRR IRRM QRR IF(AV) (A) 70 60 50 40 30 20 10 0 25 50 75 100 125 150 0 25
Duty cycle = 0.5 TJ = 45C
TJ, JUNCTION TEMPERATURE (C) FIGURE 6, Dynamic Parameters vs Junction Temperature 1400 CJ, JUNCTION CAPACITANCE (pF) 1200 1000 800 600 400 200 0
75 100 125 150 Case Temperature (C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature
50
052-6350
Rev B
6-2009
10 100 800 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage
1
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT10078BLL
APT50GT120B2RDL(G)
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
T-MAX(R) (B2) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098)
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
(Cathode)
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
Gate Collector (Cathode) Emmiter
6-2009 052-6350 Rev B
(Anode)
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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